Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current.

UNO S; DEGUCHI K; KAMAKURA Y; TANIGUCHI K

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J-GLOBAL ID：200902139578357858 Reference number：02A0501704

Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current.

ストレス誘起漏れ電流における捕獲中心密度に依存する非弾性トンネリング

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Material：
Volume： 41 Issue： 4B Page： 2645-2649 Publication year： Apr. 30, 2002
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures

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