High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; YAMADA T; MATSUSHITA T; SUGIMOTO Y; KIYOKU H

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J-GLOBAL ID：200902148929481347 Reference number：97A0854079

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes.

高パワー,長寿命InGaN多重量子井戸構造レーザダイオード

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Author (8)： , , , , , , ,
Material：
Volume： 36 Issue： 8B Page： L1059-L1061 Publication year： Aug. 15, 1997
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor lasers

Reference (6)：

1) For a review, S. Nakamura and G. Fasol: The Blue Laser Diode (Springer-Verlag, Berlin, 1997).
2) K. Itaya, M. Onomura, J. Nishino, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi and M. Ishikawa: Jpn. J. Appl. Phys. 35 (1996) L1315
3) S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto and H. Kiyoku: Appl. Phys. Lett. 70 (1997) 1417
4) S. Nakamura: MRS Internet J. Nitride Semicond. Res. 2 (1997) 5. (Available from http://nsr.mij.mrs.org/2/5/)
5) P. Perlin, M. Osinski, P. G. Eliseev, V. A. Smagley, J. Mu, M. Banas and P. Sartori: Appl. Phys. Lett. 69 (1996) 1680

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