InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices.

NAKAMURA S; SENOH M; NAGAHAMA S; IWASA N; YAMADA T; MATSUSHITA T; KIYOKU H; SUGIMOTO Y; CHOCHO K

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J-GLOBAL ID：200902154058438587 Reference number：98A0177123

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices.

変調ドープ歪層超格子をもつInGaN/GaN/AlGaNをベースにしたレーザダイオード

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Author (9)： , , , , , , , ,
Material：
Volume： 36 Issue： 12A Page： L1568-L1571 Publication year： Dec. 01, 1997
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor lasers , Lattice defects in semiconductors

Reference (13)：

1) For a review, see S. Nakamura and G. Fasol: The Blue Laser Diode (Springer-Verlag, Berlin, 1997) 1st ed.
2) K. Itaya, M. Onomura, J. Nishino, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi and M. Ishikawa: Jpn. J. Appl. Phys. 35 (1996) L1315
3) G. E. Bulman, K. Doverspike, S. T. Sheppard, T. W. Weeks, H. S. Kong, H. M. Dieringer, J. A. Edmond, J. D. Brown, J. T. Swindell and J. F. Schetzena: Electron. Lett. 33 (1997) 1556.
4) M. P. Mack, A. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U. K. Mishra, L. Coldren and S. DenBaars: MRS Int. J. Nitride Semicond. Res. 2 (1997) 41. (Available from http://nsr.mij.mrs.org/2/5/)
5) A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota and T. Tanahashi: Jpn. J. Appl. Phys. 36 (1997) L1130

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