Art

J-GLOBAL ID：200902155805416403   Reference number：00A0327275

Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge₂Sb₂Te₅ Thin Films.

スパッタ蒸着した窒素ドープ非晶質Ge₂Sb₂Te₅薄膜の結晶化の挙動

Author (6)： SEO H (LG Corporate Inst. Technol., Seoul, KOR) ,  JEONG T-H (LG Corporate Inst. Technol., Seoul, KOR) ,  PARK J-W (LG Corporate Inst. Technol., Seoul, KOR) ,  YEON C (LG Corporate Inst. Technol., Seoul, KOR) ,  KIM S-J (Ajou Univ., Suwon, KOR) ,  KIM S-Y (Ajou Univ., Suwon, KOR)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 39  Issue： 2B  Page： 745-751  Publication year： Feb. 28, 2000 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *metallic thin film ,...

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JST classification (1)： Metallic thin films  (BK14030T)

Reference (9)：

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Terms in the title (6)： スパッタ蒸着 ,  窒素ドープ ,  非晶質 ,  薄膜 ,  結晶化 ,  挙動