High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer.

LEE Y-B; WANG T; LIU Y-H; AO J-P; IZUMI Y; LACROIX Y; LI H-D; BAI J; SAKAI S

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J-GLOBAL ID：200902170495329890 Reference number：02A0642852

High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer.

SiNバッファ層がある高性能の348nmAlGaN/GaN基紫外発光ダイオード

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Author (9)： , , , , , , , ,
Material：
Volume： 41 Issue： 7A Page： 4450-4453 Publication year： Jul. 15, 2002
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Light emitting devices

Reference (9)：

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4) M. Iwaya, S. Terao, R. Nakamura, S. Kamiyama, H. Amano and I. Akasaki: Ext. Abstr. 48th Spring Meet. Japan Society of Applied Physics and Related Societies. Tokyo, March 28-31/2001, p. 366.
5) T. Nishida, H. Saito and N. Kobayashi: Appl. Phys. Lett. 78 (2001) 399.

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