Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO<sub>2</sub> Matrix.

YUN F; HINDS B J; HATATANI S; ODA S

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J-GLOBAL ID：200902182796619271 Reference number：00A0828591

Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO₂ Matrix.

SiO₂母体に埋込んだシリコンナノドットを組み合わせた室温動作単一電子狭チャネルメモリ

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Material：
Volume： 39 Issue： 8A Page： L792-L795 Publication year： Aug. 01, 2000
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Transistors

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Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO2 Matrix.

Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO₂ Matrix.