Preparation of SrBi2Ta2O9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi2Ta2O9/CeO2/Si(100) Structures.

HIRAI T; FUJISAKI Y; NAGASHIMA K; KOIKE H; TARUI Y

Art

J-GLOBAL ID：200902183565631747 Reference number：97A1019202

Preparation of SrBi₂Ta₂O₉ Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi₂Ta₂O₉/CeO₂/Si(100) Structures.

SrBi₂Ta₂O₉膜の低温形成とAl/SrBi₂Ta₂O₉/CeO₂/Si(100)構造による金属/強誘電体/絶縁体/半導体電界効果トランジスタの作製

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Material：
Volume： 36 Issue： 9B Page： 5908-5911 Publication year： Sep. 1997
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Oxide thin films , Ferroelectrics,antiferroelectrics and ferroelasticity , Transistors

Reference (12)：

MOLL, J. L. IEEE Trans.Electron Devices. 1963, ED-10, 338
WU, S. Y. Ferroelectrics. 1976, 11, 379
MATSUI, Y. Appl.Phys.A. 1982, 28, 161
LAMPE, D. R. Ferroelectrics. 1992, 133, 61
HIRAI, T. Jpn.J.Appl.Phys. 1994, 33, 5219

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