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J-GLOBAL ID：200902194408346240   Reference number：99A0326756

1.3 μm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots.

InAs/GaAs自己形成量子ドットによる1.3μm室温発光

Author (7)： MURRAY R (Imperial Coll., London, GBR) ,  CHILDS D (Imperial Coll., London, GBR) ,  MALIK S (Imperial Coll., London, GBR) ,  SIVERNS P (Imperial Coll., London, GBR) ,  ROBERTS C (Imperial Coll., London, GBR) ,  HARTMANN J-M (Imperial Coll., London, GBR) ,  STAVRINOU P (Imperial Coll., London, GBR)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 38  Issue： 1B  Page： 528-530  Publication year： Jan. 30, 1999 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： indium arsenide ,...

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JST classification (1)： Luminescence of semiconductors  (BM08092S)

Reference (13)：

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• (5) D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. Den Baars and P.M. Petroff: Appl. Phys. Lett. 63 (1993) 3203.

Terms in the title (5)： InAs ,  GaAs ,  自己形成 ,  量子ドット ,  室温