Art
J-GLOBAL ID:200902207137765646   Reference number:08A0790737

Statistical p-n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design

リフレッシュ時間志向のダイナミックランダムアクセスメモリの設計のための捕獲準位のゆらぎによる統計的p-n接合の漏れの模型
Author (5):
Material:
Volume: 47  Issue: 7 Issue 1  Page: 5304-5308  Publication year: Jul. 25, 2008 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit 
Reference (26):
more...

Return to Previous Page