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J-GLOBAL ID：200902209318981084   Reference number：06A0216437

Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

酸化アルミニウムのゲート絶縁体を持つダイヤモンドを基本とする金属-絶縁体-半導体電界効果トランジスターの特性評価

Author (9)： HIRAMA Kazuyuki (School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  MIYAMOTO Shingo (School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  MATSUDAIRA Hiroki (School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  YAMADA Keisaku (School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  KAWARADA Hiroshi (School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN) ,  CHIKYO Toyohiro (Advanced Materials Laboratories, National Inst. for Materials Sci., 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan and ...) ,  KOINUMA Hideomi (Advanced Materials Laboratories, National Inst. for Materials Sci., 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan and ...) ,  HASEGAWA Ken (Materials and Structures Lab., Tokyo Inst. of Technol., 4259 Nagatsuta, Midori, Yokohama 226-8503, JPN) ,  UMEZAWA Hitoshi (Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 88  Issue： 11  Page： 112117-112117-3  Publication year： Mar. 13, 2006 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *Diamond ,...
Semi thesaurus term： field effect transistor

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JST classification (1)： Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (6)： 酸化アルミニウム ,  ゲート絶縁体 ,  ダイヤモンド ,  絶縁体 ,  電界効果トランジスター ,  特性評価