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J-GLOBAL ID：200902212010526050   Reference number：06A0643009

Fabrication of high-aspect-ratio arrayed structures using Si electrochemical etching

Si電気化学エッチングを用いる高アスペクト比アレイ構造の加工
Author (2)：
SATO Hirotaka

About SATO Hirotaka

(Dep. of Applied Chemistry, Waseda Univ., Okubo, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, JPN)

About Dep. of Applied Chemistry, Waseda Univ., Okubo, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, JPN

, 
HOMMA Takayuki

About HOMMA Takayuki

(Dep. of Applied Chemistry, Waseda Univ., Okubo, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, JPN)

About Dep. of Applied Chemistry, Waseda Univ., Okubo, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, JPN


Material：
Science and Technology of Advanced Materials  (Sci Technol Adv Mater)

About Science and Technology of Advanced Materials


Volume： 7  Issue： 5  Page： 468-474  Publication year： Jul. 2006 
JST Material Number： W1262A  ISSN： 1468-6996  Document type： Article
Article type： 文献レビュー  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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*electrolytic etching

About electrolytic etching

,...
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array processing

About array processing

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
Si

About Si

, 
電気化学エッチング

About 電気化学エッチング

, 
高アスペクト比

About 高アスペクト比

, 
アレイ

About アレイ


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