Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy

MASAHARA Meishoku; HOSOKAWA Shinichi; MATSUKAWA Takashi; ENDO Kazuhiko; NAITOU Yuichi; TANOUE Hisao; SUZUKI Eiichi

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J-GLOBAL ID：200902213483814661 Reference number：05A0535207

Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy

走査型非線形誘電顕微鏡法による縦型二重ゲート金属-酸化物-半導体電界効果トランジスタの極薄チャネル内におけるドーパントプロフィールの明示

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Material：
Volume： 44 Issue： 4B Page： 2400-2404 Publication year： Apr. 30, 2005
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Transistors

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