Rchr
J-GLOBAL ID：200901096043502676
Update date: Aug. 31, 2020
Naitou Yuichi
ナイトウ ユウイチ | Naitou Yuichi
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=Y64099145
Papers (16)：
Yuichi Naitou. Carrier accumulation and depletion in point-contact capacitance-voltage measurements. AIP ADVANCES. 2017. 7. 11
Yuichi Naitou, Shinichi Ogawa. Conductivity change of defective graphene by helium ion beams. AIP ADVANCES. 2017. 7. 4
Y. Naitou, S. Ogawa. Anderson localization of graphene by helium ion irradiation. APPLIED PHYSICS LETTERS. 2016. 108. 17. 171605-1-171605-4
Y. Naitou, T. Iijima, S. Ogawa. Direct nano-patterning of graphene with helium ion beams. APPLIED PHYSICS LETTERS. 2015. 106. 3. 033103-1-033103-4
Shinsuke Shimamoto, Yuichi Naitou, Yasuhiro Fukuyama, Shogo Kiryu, Nobu-Hisa Kaneko. Native graphene oxides at graphene edges. IEEE Transactions on Instrumentation and Measurement. 2013. 62. 6. 1461-1466
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MISC (4)：
Y Naitou, H Ogiso. Scanning capacitance microscopy evaluation of lead zirconate titanate film formed by aerosol deposition method. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 3B. 1922-1925
Y Naitou, A Ando, H Ogiso, S Kamiyama, Y Nara, K Nakamura, H Watanabe, K Yasutake. Spatial fluctuation of dielectric properties in Hf-based high-k gate films studied by scanning capacitance microscopy. APPLIED PHYSICS LETTERS. 2005. 87. 25. 252908-1-252908-3
M Masahara, S Hosokawa, T Matsukawa, K Endo, Y Naitou, H Tanoue, E Suzuki. Demonstration of dopant profiling in ultrathin channels of vertical-type double-gate metal-oxide-semiconductor field-effect-transistor by scanning nonlinear dielectric microscopy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 4B. 2400-2404
Dopant profiling in vertical ultrathin channels for double-gate MOSFETs by using SNDM. APPLIED PHYSICS LETTERS. 2004. 85. 18. 4139-4141
Professional career (1)：
工学博士
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