Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy

KATOH S.; SAGISAKA H.; YAMAMOTO M.; WATANABE I.; KITADA T.; SHIMOMURA S.; HIYAMIZU S.

Art

J-GLOBAL ID：200902222155835472 Reference number：05A0682272

Interface roughness characterization by electron mobility of pseudomorphic In_0.74Ga_0.26As/In_0.52Al_0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy

分子ビームエピタクシーにより(411)A InP基板上に成長させたシュードモルフィックIn_0.74Ga_0.26As/In_0.52Al_0.48As変調ドープ量子井戸の電子移動度による界面粗さ特性

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Material：
Volume： 23 Issue： 3 Page： 1154-1157 Publication year： May. 2005
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Solid-state plasmas

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