Homoepitaxial growth of 4H-SiC on on-axis (0 0 0 <span style=text-decoration:overline>1</span>) C-face substrates by chemical vapor depositon

KOJIMA K; OKUMURA H; KURODA S; ARAI K

Art

J-GLOBAL ID：200902222181908275 Reference number：04A0683676

Homoepitaxial growth of 4H-SiC on on-axis (0 0 0 <span style=text-decoration:overline>1</span>) C-face substrates by chemical vapor depositon

軸方位(000-1)C面基板に化学蒸着による4H-SiCのホモエピタキシャル成長

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Material：
Volume： 269 Issue： 2/4 Page： 367-376 Publication year： Sep. 01, 2004
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Semiconductor thin films , Diodes

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