Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma

NIIKURA C; KONDO M; MATSUDA A

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J-GLOBAL ID：200902226063416754 Reference number：04A0511808

Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma

高密度プラズマを用いて超高速の10nm/sで微結晶シリコン膜の調製

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Author (3)： , ,
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Volume： 338/340 Page： 42-46 Publication year： Jun. 15, 2004
JST Material Number： D0642A ISSN： 0022-3093 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Techniques and equipment of thin film deposition , Salts

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