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J-GLOBAL ID：200902229247408737   Reference number：07A1233196

On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO2 etching process

SiO₂エッチングプロセス中における高アスペクト比コンタクトホールにおける電荷蓄積及び側壁伝導率のオンウエハモニタリング

Author (9)： JINNAI Butsurin (Inst. of Fluid Sci., Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JPN) ,  ORITA Toshiyuki (Semiconductor Technol. Academic Res. Center (STARC), 17-2 Shin Yokohama, 3-chome, Kohoku-ku, Yokohama 222-0033, JPN) ,  KONISHI Mamoru (Semiconductor Technol. Academic Res. Center (STARC), 17-2 Shin Yokohama, 3-chome, Kohoku-ku, Yokohama 222-0033, JPN) ,  HASHIMOTO Jun (Semiconductor Technol. Academic Res. Center (STARC), 17-2 Shin Yokohama, 3-chome, Kohoku-ku, Yokohama 222-0033, JPN) ,  ICHIHASHI Yoshinari (Semiconductor Technol. Academic Res. Center (STARC), 17-2 Shin Yokohama, 3-chome, Kohoku-ku, Yokohama 222-0033, JPN) ,  NISHITANI Akito (Semiconductor Technol. Academic Res. Center (STARC), 17-2 Shin Yokohama, 3-chome, Kohoku-ku, Yokohama 222-0033, JPN) ,  KADOMURA Shingo (Semiconductor Technol. Academic Res. Center (STARC), 17-2 Shin Yokohama, 3-chome, Kohoku-ku, Yokohama 222-0033, JPN) ,  OHTAKE Hiroto (Inst. of Fluid Sci., Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JPN) ,  SAMUKAWA Seiji (Inst. of Fluid Sci., Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JPN)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 25  Issue： 6  Page： 1808  Publication year： Nov. 2007 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *electric contact hole ,...
Semi thesaurus term： *fluorocarbon ,...

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JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Applications of plasma  (BJ02110K)

Substance index (1)： Octafluorocyclobutane

Terms in the title (7)： SiO2 ,  エッチングプロセス ,  高アスペクト比 ,  コンタクトホール ,  電荷蓄積 ,  側壁 ,  伝導率