Art

J-GLOBAL ID：200902236209851410   Reference number：09A1258143

Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide

Si埋込み酸化物を用いたMOSキャパシタにおける電流-電圧ヒステリシス特性

Author (7)： MATSUDA Toshihiro (Toyama Prefectural Univ., Imizu-shi, JPN) ,  ISHIMARU Shinsuke (Toyama Prefectural Univ., Imizu-shi, JPN) ,  NOHARA Shingo (Toyama Prefectural Univ., Imizu-shi, JPN) ,  IWATA Hideyuki (Toyama Prefectural Univ., Imizu-shi, JPN) ,  KOMOKU Kiyotaka (Okayama Prefectural Univ., Soja-shi, JPN) ,  MORISHITA Takayuki (Okayama Prefectural Univ., Soja-shi, JPN) ,  OHZONE Takashi (Dawn Enterprise Co., LTD., Nagoya-shi, JPN)
Material： IEICE Transactions on Electronics (Institute of Electronics, Information and Communication Engineers)  (IEICE Trans Electron (Inst Electron Inf Commun Eng))
Volume： E92-C  Issue： 12  Page： 1523-1530  Publication year： Dec. 01, 2009 
JST Material Number： L1370A  ISSN： 0916-8524  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： silicon ,  interposition ,  oxide ,  *MOS structure ,  *thin film condenser ,  current-voltage characteristic ,  *hysteresis ,  nonvolatile memory ,  electroluminescence ,  solid state device ,  thermal oxidation

JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Semiconductor integrated circuit  (NC03162T)

Reference (49)：

• KALNITSKY, A. Memory effect and enhanced conductivity in Si-implanted thermally grown SiO_2. IEEE Trans. Electron Devices. 1987, ED-34, 11, 2372
• HORI, T. A MOSFET with Si-implanted gate-SiO_2 insulator for nonvolatile memory applications. IEDM Tech. Dig., 1992. 1992, 469-472
• TIWARI, S. Volatile and non-volatile memories in silicon with nano-crystal storage. IEDM Tech. Dig., 1995. 1995, 521-524
• TIWARI, S. A silicon nanocrystals based memory. Appl. Phys. Lett. 1996, 68, 10, 1377-1379
• NING, T. H. Silicon technology-emerging trends from a system application perspective. 2003 Symp. VLSI Technology, Dig. Tech. Papers. 2003

Terms in the title (5)： Si ,  埋込み ,  酸化物 ,  MOSキャパシタ ,  ヒステリシス特性