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J-GLOBAL ID：200902246920967800
Reference number：07A0410105
Neutralization and Discharge of Electron Traps in Hydrogenated Diamond-Like Carbon Films Deposited on Ground Electrode by Plasma-Enhanced Chemical Vapor Deposition
プラズマ支援化学気相蒸着により接地した電極上に堆積した水素化ダイヤモンド状カーボン膜における電子捕獲の中性化と放電
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Author (3)：
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Material：
Volume：
46
Issue：
4A
Page：
1568-1570
Publication year：
Apr. 15, 2007
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
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Electronic structure of impurites and defects
Reference (6)：
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H. Treichel, B. Withers, G. Ruhl, P. Ansmann, R. Wurl, C. Muller, M. Dietlmeier, and G. Maier: in Handbook of Low and High Dielectric Constant Materials and Their Applications, ed. H. S. Nalwa (Academic. San Diego, 1999) p. 1.
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J. L. Vossen: J. Electrochem. Soc.126(1979)319.
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K. Yokota, Y. Miyoshi, and M. Saoyama: Jpn. J. Appl. Phys.45(2006)860.
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D. K. Schroder: Semiconductor Material and Device Characterisation (Wiley, New York, 1998) p. 362.
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L. G. Paratt: Phys. Rev.95(1954)359.
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