Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy

IMURA M.; KUROHARA H.; MASUI Y.; ASANO T.; KITADA T.; SHIMOMURA S.; HIYAMIZU S.

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J-GLOBAL ID：200902249128264566 Reference number：05A0682273

Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy

分子ビームエピタクシーにより(411)A InP基板上に成長させたInGaAs/AlAsSb量子井戸構造の平坦界面の大幅な改善

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Material：
Volume： 23 Issue： 3 Page： 1158-1161 Publication year： May. 2005
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Semiconductor-semiconductor contacts with Gr.13-15 element compounds

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