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J-GLOBAL ID:200902249128264566   Reference number:05A0682273

Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy

分子ビームエピタクシーにより(411)A InP基板上に成長させたInGaAs/AlAsSb量子井戸構造の平坦界面の大幅な改善
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Volume: 23  Issue:Page: 1158-1161  Publication year: May. 2005 
JST Material Number: E0974A  ISSN: 1071-1023  CODEN: JVTBD9  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Semiconductor-semiconductor contacts with Gr.13-15 element compounds 

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