Dopant profiling in vertical ultrathin channels of double-gate metal-oxide-semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

MASAHARA M; HOSOKAWA S; MATSUKAWA T; ENDO K; NAITOU Y; TANOUE H; SUZUKI E

Art

J-GLOBAL ID：200902256412029735 Reference number：04A0858935

Dopant profiling in vertical ultrathin channels of double-gate metal-oxide-semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

走査型非線形誘電顕微鏡法を用いた二重ゲート金属酸化物半導体電界効果トランジスタの垂直方向超薄チャネルにおけるドーパントプロファイリング

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=04A0858935&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0858935&from=J-GLOBAL&jstjournalNo=H0613A") }}

Author (7)： , , , , , ,
Material：
Volume： 85 Issue： 18 Page： 4139-4141 Publication year： Nov. 01, 2004
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0858935&from=J-GLOBAL&jstjournalNo=H0613A") }}

Transistors

, , , , , , ,

Return to Previous Page