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J-GLOBAL ID:200902261599694790   Reference number:06A0124725

Si,InGaAs系デバイスの放射線損傷と導入格子欠陥に関する研究(III)

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Issue: UTRCN-G-34  Page: 10-14  Publication year: 2006 
JST Material Number: X0698A  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Irradiational changes semiconductors  ,  Materials of solid-state devices 
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