Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

HASHIZUME T; OOTOMO S; INAGAKI T; HASEGAWA H

Art

J-GLOBAL ID：200902264664592311 Reference number：03A0612153

Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

誘電体膜によるGaN及びGaN/AlGaNヘテロ構造の表面不動態化とその絶縁ゲートヘテロ構造トランジスタへの適用

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Author (4)： , , ,
Material：
Volume： 21 Issue： 4 Page： 1828-1838 Publication year： Jul. 2003
JST Material Number： E0974A ISSN： 1071-1023 CODEN： JVTBD9 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Oxide thin films

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