{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad01_expire_date}}
{{ $t("message.ADVERTISEMENT") }}
{{ $t("message.AD_EXPIRE_DATE") }}{{ad02_expire_date}}
Art
J-GLOBAL ID:200902265885500337   Reference number:08A0340924

Improvement of emission efficiency of nanocrystalline silicon planar cathodes

ナノ結晶シリコン平面陰極の放出効率の改善
Author (6):
Material:
Volume: 26  Issue:Page: 864  Publication year: Mar. 2008
JST Material Number: E0974A  ISSN: 1071-1023  CODEN: JVTBD9  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (3):
JST classification
Category name(code) classified by JST.
Thermoionic emission and field emission  ,  Metal-insulator-semiconductor structures  ,  Electron and ion sources 
Terms in the title (3):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page