Art

J-GLOBAL ID：200902265885500337   Reference number：08A0340924

Improvement of emission efficiency of nanocrystalline silicon planar cathodes

ナノ結晶シリコン平面陰極の放出効率の改善

Author (6)： SHIMAWAKI Hidetaka (Dep. of System and Information Engineering, Fac. of Engineering, Hachinohe Inst. of Technol., Hachinohe 031-8501, JPN) ,  NEO Yochiro (Res. Inst. of Electronics, Shizuoka Univ., Hamamatsu 432-8011, JPN) ,  MIMURA Hidenori (Res. Inst. of Electronics, Shizuoka Univ., Hamamatsu 432-8011, JPN) ,  MURAKAMI Katsuhisa (Center for Quantum Sci. and Technol. under Extreme Conditions, Osaka Univ., Osaka 560-8531, JPN) ,  WAKAYA Fujio (Center for Quantum Sci. and Technol. under Extreme Conditions, Osaka Univ., Osaka 560-8531, JPN) ,  TAKAI Mikio (Center for Quantum Sci. and Technol. under Extreme Conditions, Osaka Univ., Osaka 560-8531, JPN)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 26  Issue： 2  Page： 864  Publication year： Mar. 2008 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： electron emission ,  *field emission ,  *silicon ,  *nano crystal ,  gold ,  gate(semiconductor) ,  *cathode ,  plane structure ,  film thickness ,  work function ,  nanostructure ,  angular dependence ,  energy distribution ,  *MOS structure ,  *silicon oxide ,  electron source

JST classification (3)： Thermoionic emission and field emission  (BM09020S) ,  Metal-insulator-semiconductor structures  (BM03085X) ,  Electron and ion sources  (BD02020U)

Terms in the title (3)： ナノ結晶シリコン ,  陰極 ,  放出