Art
J-GLOBAL ID：200902275435749446
Reference number：04A0586188
Epitaxial Growth of Semiconducting BaSi2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
反応性堆積エピタクシーによるSi(111)基板への半導性BaSi2薄膜のエピタキシャル成長
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Author (4)：
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Material：
Volume：
43
Issue：
7A
Page：
4155-4156
Publication year：
Jul. 15, 2004
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
短報
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
Reference (22)：
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1) M. C. Bost and J. E. Mahan: J. Appl. Phys. 58 (1985) 2696.
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2) Y. Maeda, K. Umezawa, K. Miyake and M. Sagawa: Thin Solid Films 381 (2001) 256.
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3) S. Wang, N. Otogawa, Y. Fukuzawa, H. Shen, H. Tanoue, T. Kojima, Y. Nakayama and Y. Makita: Proc. SPIE 5065 (2003) 188.
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4) D. Leong, M. Harry, K. J. Reeson and K. P. Homewood: Nature 387 (1997) 686.
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5) T. Suemasu, Y. Negishi, K. Takakura and F. Hasegawa: Jpn. J. Appl. Phys. 39 (2000) L1013.
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Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
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