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J-GLOBAL ID:200902292893556977   Reference number:05A0763833

Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-μm-Wavelength Region Grown on InP Substrates

InP基板上に成長させた2μmの波長域で作動するInGaAsSbN量子井戸型レーザーダイオードの発振特性
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Volume: 44  Issue:Page: 6000-6001  Publication year: Aug. 15, 2005 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Solid-state lasers 
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