Art

J-GLOBAL ID：200902293482451097   Reference number：08A0202488

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

テトラキス(ジメチルアミノ)すずを用いた酸化スズ膜の原子層蒸着

Author (6)： ELAM Jeffrey W. (Argonne National Lab., Argonne, Illinois 60439) ,  BAKER David A. (Argonne National Lab., Argonne, Illinois 60439) ,  HRYN Alexander J. (Argonne National Lab., Argonne, Illinois 60439) ,  MARTINSON Alex B. F. (Argonne National Lab., Argonne, Illinois 60439 and Dep. of Chemistry, Northwestern Univ., Evanston, Illinois 60208) ,  PELLIN Michael J. (Argonne National Lab., Argonne, Illinois 60439) ,  HUPP Joseph T. (Dep. of Chemistry, Northwestern Univ., Evanston, Illinois 60208)
Material： Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films  (Journal of Vacuum Science and Technology. A. Vacuum, Surfaces, and Films)
Volume： 26  Issue： 2  Page： 244  Publication year： Mar. 2008 
JST Material Number： C0789B  ISSN： 0734-2101  CODEN： JVTAD6  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： tin compound ,  *tin oxide ,  chemical vapor deposition ,  monoatomic layer ,  *semiconductor thin film ,  compound semiconductor ,  hydrogen peroxide ,  halide ,  tin chloride ,  corrosion ,  aggregation ,  substrate(plate) ,  growth rate ,  temperature dependence ,  in situ observation ,  quartz ,  microbalance ,  quadruple mass spectrometer ,  silicon ,  scanning electron microscope ,  atomic force microscope ,  surface roughness ,  X-ray diffraction ,  amorphous state ,  glass ,  film thickness ,  electrical resistivity ,  optical transmission ,  X-ray photoelectron spectroscopy ,  ligand ,  aspect ratio ,  alumina ,  covering ,  aliphatic amine ,  secondary amine

JST classification (1)： Oxide thin films  (BK14050P)

Substance index (2)： Dimethylamine ,  Tetrakis(dimethylamino)ethene

Terms in the title (4)： テトラ ,  すず ,  酸化スズ ,  原子層蒸着