Art
J-GLOBAL ID：200902294539168709
Reference number：05A0703603
Impact of Aggressively Shallow Source/Drain Extensions on Device Performance
デバイス性能に及ぼす極めて浅いソース/ドレイン延長部の影響
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Author (3)：
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Material：
Volume：
44
Issue：
7A
Page：
4843-4847
Publication year：
Jul. 15, 2005
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors
Reference (8)：
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1) K. Kimoto and T. Kanayama: Mater. Sci. Eng. B 114–115 (2004) 367.
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2) MEDICI, Synopsys, Inc., California, U.S.A.
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3) International Technology Roadmap for Semiconductors 2002 Update (available online at http://www.public.itrs.net).
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4) C. Lombardi, S. Manzini, A. Saporito and M. Vanzi: IEEE Trans. Comput.-Aid. Des. 7 (1988) 1164.
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5) D. M. Caughey and R. E. Thomas: Proc. IEEE 55 (1967) 2192.
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Terms in the title (3)：
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