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Rchr
J-GLOBAL ID：201001092661361442
Update date: Nov. 10, 2022 Yamada Hiroshi
ヤマダ ヒロシ | Yamada Hiroshi
ClipsResearch field (7)：
Science education
, Environmental materials/recycling technology
, Environmental load reduction/restoration technology
, Nano/micro-systems
, Nanomaterials
, Thin-film surfaces and interfaces
, Electric/electronic material engineering
Research theme for competitive and other funds (2)： - 薄膜(デバイス・環境)材料、ESD(持続発展教育)、総合教育
- Thinfilm (Nano-Device & Environmental) Materials, ESD (Education for Sustainable Development)
- Hiroshi Yamada. Fundamental reliability of 1.5-nm-thick silicon oxide gate films grown at 150 degrees C by modified reactive ion beam deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2008. 26. 1. 36-43
- Hiroshi Yamada. Effects of N and F passivation on the reliability and interface structure of 700 degrees C grown ultrathin silicon oxide/Si(100) gate films. JOURNAL OF APPLIED PHYSICS. 2008. 103. 1
- 山田 宏. 1.5-nm-thick silicon oxide gate films grown at 150°C using modified reactive ion beam deposition with pyrolytic-gas passivation. Journal of Vacuum Science & Technology, A25 (pp. 340-346). 2007
- Hiroshi Yamada. Excess Si and passivating N and F atoms near the pyrolytic-gas-passivated ultrathin silicon oxide film/Si(100) interface. JOURNAL OF APPLIED PHYSICS. 2006. 100. 12
- Hiroshi Yamada. Additional fluorine passivation to pyrolytic-N2O passivated ultrathin silicon oxide/Si(100) films. JOURNAL OF APPLIED PHYSICS. 2006. 100. 3
- 山田 宏. 導電薄膜の製造装置及び製造方法. 特開2007-314864. 2007
- 山田 宏. 導電多層膜. 特開2007-144686. 2007
- 山田 宏. 導電薄膜. 特開2007-012847. 2007
- 山田 宏. 傾斜機能多層膜誘電体. 特開2001-326141. 2001
- 山田 宏. 傾斜機能多層膜磁性体. 特開2001-250718. 2001
- 超低水分極薄酸化膜形成技術
「Siデバイス・プロセス技術 - 極限追及と実用化」向井監修, 荒井・酒井編著, NTT出版 2017
- Doctor of Engineering
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