Art

J-GLOBAL ID：201002245062121055   Reference number：10A0201211

Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature

低温でのUV励起オゾン酸化におけるケイ素基質の最表面温度の評価

Author (10)： KAMEDA Naoto (Meidensha Corp.) ,  KAMEDA Naoto (National Inst. of Advanced Industrial Sci. and Technol. (AIST)) ,  NISHIGUCHI Tetsuya (Meidensha Corp.) ,  NISHIGUCHI Tetsuya (National Inst. of Advanced Industrial Sci. and Technol. (AIST)) ,  MORIKAWA Yoshiki (Meidensha Corp.) ,  KEKURA Mitsuru (Meidensha Corp.) ,  NAKAMURA Ken (National Inst. of Advanced Industrial Sci. and Technol. (AIST)) ,  USHIYAMA Tomoharu (National Inst. of Advanced Industrial Sci. and Technol. (AIST)) ,  NONAKA Hidehiko (National Inst. of Advanced Industrial Sci. and Technol. (AIST)) ,  ICHIMURA Shingo (National Inst. of Advanced Industrial Sci. and Technol. (AIST))
Material： Analytical Sciences  (Anal Sci)
Volume： 26  Issue： 2  Page： 273-276 (J-STAGE)  Publication year： 2010 
JST Material Number： G0673B  ISSN： 0910-6340  CODEN： ANSCEN  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： ultraviolet irradiation ,  *silicon ,  wafer ,  Ozone ,  surface temperature ,  polysilicon ,  optical pumping ,  temperature dependence ,  reaction rate ,  oxidation ,  substrate (biochemistry) ,  *Photochemistry ,  *X-ray photoelectron spectroscopy ,  silicon oxide ,  oxide film ,  gate dielectric film ,  conversion coating film
Semi thesaurus term： ozone gas ,  optical pumping ,  gate dielectric

JST classification (3)： Physical analysis of inorganic compounds  (CC03024P) ,  Photochemistry in general  (CB08010U) ,  Electron spectroscopy  (BM09060K)

Reference (15)：

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• 2. T. Nishiguchi, Y. Morikawa, M. Kekura, H. Nonaka, and S. Ichimura, Rev. Sci. Instrum., 2002, 73, 1217.
• 3. S. Ichimura, H. Nonaka, Y. Morikawa, T. Noyori, T. Nishiguchi, and M. Kekura, J. Vac. Sci. Technol., A, 2004, 22, 1410.
• 4. S. Hosokawa and S. Ichimura, Rev. Sci. Instrum., 1991, 62, 1614.
• 5. S. Ichimura, S. Hosokawa, H. Nonaka, and K. Arai, J. Vac. Sci. Technol., A, 1991, 9, 2369.

Terms in the title (7)： 低温 ,  励起 ,  オゾン酸化 ,  ケイ素 ,  基質 ,  表面温度 ,  評価