Art

J-GLOBAL ID：201102269526737740   Reference number：11A1681968

Excimer laser crystallization of InGaZnO₄ on SiO₂ substrate

SiO₂基板上のInGaZnO₄のエキシマレーザ結晶化

Author (11)： CHEN Tao (Delft Univ. of Technol., Lab. of Electronic Components, Technol. and Materials (ECTM), Delft Inst. of Microsystems ...) ,  WU Meng-Yue (Delft Univ. of Technol., Lab. of Electronic Components, Technol. and Materials (ECTM), Delft Inst. of Microsystems ...) ,  WU Meng-Yue (Delft Univ. of Technol., Kavli Inst. of Nanoscience, Lorentzweg 1, 2628 CJ, Delft, NLD) ,  ISHIHARA Ryoichi (Delft Univ. of Technol., Lab. of Electronic Components, Technol. and Materials (ECTM), Delft Inst. of Microsystems ...) ,  NOMURA Kenji (Delft Univ. of Technol., Lab. of Electronic Components, Technol. and Materials (ECTM), Delft Inst. of Microsystems ...) ,  NOMURA Kenji (Tokyo Inst. of Technol., Materials and Structures Lab., 4259 Nagatsuta, Midori, 226-8503, Yokohama, JPN) ,  KAMIYA Toshio (Delft Univ. of Technol., Lab. of Electronic Components, Technol. and Materials (ECTM), Delft Inst. of Microsystems ...) ,  KAMIYA Toshio (Tokyo Inst. of Technol., Materials and Structures Lab., 4259 Nagatsuta, Midori, 226-8503, Yokohama, JPN) ,  HOSONO Hideo (Delft Univ. of Technol., Lab. of Electronic Components, Technol. and Materials (ECTM), Delft Inst. of Microsystems ...) ,  HOSONO Hideo (Tokyo Inst. of Technol., Materials and Structures Lab., 4259 Nagatsuta, Midori, 226-8503, Yokohama, JPN) ,  M BEENAKKER C. I. (Delft Univ. of Technol., Lab. of Electronic Components, Technol. and Materials (ECTM), Delft Inst. of Microsystems ...)
Material： Journal of Materials Science. Materials in Electronics  (J Mater Sci Mater Electron)
Volume： 22  Issue： 11  Page： 1694-1696  Publication year： Nov. 2011 
JST Material Number： W0003A  ISSN： 0957-4522  CODEN： JMTSAS  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon dioxide ,  *substrate (plate) ,  indium compound ,  *excimer laser ,  gallium compound ,  zinc compound ,  oxide ,  *crystallization ,  *compound semiconductor ,  polycrystal ,  *semiconductor thin film ,  low temperature ,  *thin film transistor ,  laser annealing ,  X-Ray Diffraction ,  *laser irradiation ,  transmission electron microscope ,  electron microscopy ,  indium gallium zinc oxide
Semi thesaurus term： IGZO(semiconductor)

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Applications of lasers  (BD04100V)

Terms in the title (3)： SiO2 ,  エキシマレーザ ,  結晶化