Art

J-GLOBAL ID：201102292167491465   Reference number：11A1617976

Solid-phase epitaxial growth of (111)-oriented Si film on InGaO₃(ZnO)₅ buffer layer

InGaO₃’(ZnO)₅バッファ層上への(111)配向Si膜の固相エピタキシャル成長

Author (9)： CHEN Tao (Delft Univ. of Technol., Delft Inst. of Microsystems and Nanoelectronics Technol. (DIMES), Lab. of Electronic ...) ,  WU Meng-Yue (Delft Univ. of Technol., Kavli Inst. of Nanoscience, Lorentzweg 1, 2628 CJ, Delft, NLD) ,  ISHIHARA Ryoichi (Delft Univ. of Technol., Delft Inst. of Microsystems and Nanoelectronics Technol. (DIMES), Lab. of Electronic ...) ,  NOMURA Kenji (Tokyo Inst. of Technol., Materials and Structures Lab., 4259 Nagatsuta, 226-8503, Midori, Yokohama, JPN) ,  NOMURA Kenji (Tokyo Inst. of Technol., Frontier Res. Center, 4259 Nagatsuta, 226-8503, Midori, Yokohama, JPN) ,  KAMIYA Toshio (Tokyo Inst. of Technol., Materials and Structures Lab., 4259 Nagatsuta, 226-8503, Midori, Yokohama, JPN) ,  HOSONO Hideo (Tokyo Inst. of Technol., Materials and Structures Lab., 4259 Nagatsuta, 226-8503, Midori, Yokohama, JPN) ,  HOSONO Hideo (Tokyo Inst. of Technol., Frontier Res. Center, 4259 Nagatsuta, 226-8503, Midori, Yokohama, JPN) ,  BEENAKKER C. I. M. (Delft Univ. of Technol., Delft Inst. of Microsystems and Nanoelectronics Technol. (DIMES), Lab. of Electronic ...)
Material： Journal of Materials Science. Materials in Electronics  (J Mater Sci Mater Electron)
Volume： 22  Issue： 8  Page： 920-923  Publication year： Aug. 2011 
JST Material Number： W0003A  ISSN： 0957-4522  CODEN： JMTSAS  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： solid phase growth ,  *heteroepitaxy ,  *buffer layer ,  *crystal orientation ,  silicon ,  *semiconductor thin film ,  lower layer ,  compound semiconductor ,  gallium compound ,  zinc compound ,  indium oxide ,  misfit ,  electron diffraction ,  backward scattering ,  *low temperature ,  excimer laser ,  *laser annealing ,  indium gallium zinc oxide
Semi thesaurus term： IGZO(semiconductor) ,  EBSD ,  seed-layer

JST classification (1)： Oxide thin films  (BK14050P)

Terms in the title (5)： ZnO ,  バッファ層 ,  配向 ,  Si膜 ,  固相エピタキシャル成長