Art

J-GLOBAL ID：201202260628466776   Reference number：12A0038340

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

(1 1 1)指向InGaAsチャネル金属-絶縁体-半導体電界効果トランジスタにおける電子移動度向上の原因

Author (12)： MIYATA Noriyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN) ,  ISHII Hiroyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN) ,  URABE Yuji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN) ,  ITATANI Taro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN) ,  YASUDA Tetsuji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN) ,  YAMADA Hisashi (Sumitomo Chemical, Tsukuba, JPN) ,  FUKUHARA Noboru (Sumitomo Chemical, Tsukuba, JPN) ,  HATA Masahiko (Sumitomo Chemical, Tsukuba, JPN) ,  DEURA Momoko (Univ. Tokyo, Tokyo, JPN) ,  SUGIYAMA Masakazu (Univ. Tokyo, Tokyo, JPN) ,  TAKENAKA Mitsuru (Univ. Tokyo, Tokyo, JPN) ,  TAKAGI Shinichi (Univ. Tokyo, Tokyo, JPN)
Material： Microelectronic Engineering  (Microelectron Eng)
Volume： 88  Issue： 12  Page： 3459-3461  Publication year： Dec. 2011 
JST Material Number： C0406B  ISSN： 0167-9317  CODEN： MIENEF  Document type： Article
Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Terms in the title (6)： InGaAs ,  チャネル ,  絶縁体 ,  電界効果トランジスタ ,  電子移動度 ,  原因