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Co-authoring Researcher

  • GOTOW Takahiro
    National Institute of Advanced Industrial Science and Technology
    TCADシミュレーション, MOS界面評価, 半導体デバイス
  • Sadoh Taizoh
    Kyushu University Faculty of Information Science and Electrical Engineering
    半導体工学, 固体物性I, 応用物性・結晶工学, Solid-State Physics I, Applied Physics of Property and Crystallography

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J-GLOBAL ID：201301074692078670 Update date: Nov. 24, 2024

Matsumura Ryo

マツムラ リョウ | Matsumura Ryo
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Lectures and oral presentations (11)

  • Analysis and control of Si segregation phenomena to achieve uniform-SiGe crystals on insulator by rapid-melting growth
    (2015 International Electron Devices and Materials Symposium, IEDMS 2015 2015)
  • Segregation-Controlled Rapid-Melting Growth for Sige-on-Insulator with Uniform Lateral Composition
    (24th International Materials Research Congress, IMRC2015 2015)
  • Low Temperature (<200oC) position controlled Solid Phase Crystallization of GeSn combined with Laser Anneal Seeding
    (ICSI 9 2015)
  • Low-Temperature Crystallization of a-GeSn on Insulating Films for Next-Generation Flexible Electronics(1) Characteristics of Solid Phase Crystallization
    (2014 International Electron Devices and Materials Symposium, IEDMS 2014 2014)
  • Segregation-Controlled Rapid-Melting Growth for Large-Grain and Uniform -Composition SiGe on Insulator” (JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
    (JSPS-imec 2014 2014)
  • Composite-Structures of Single-Crystalline Ge(SiSn) and Amorphous Insulator on Si Platform for Multi-Functional Transistors by Self-Organized Processing
    (ryom1102The Twenty-second Annual International Conference on Composites-Nano Engineering , ICCE-22 2014)
  • Segregation-Free Giant Single-Crystalline SiGe-on-Insulator by Super-Cooling-Controlled Rapid-Melting Growth
    (ryom1102International Conference on Solid State Devices and Materials2013, SSDM2013 2013)
  • Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth
    (International Conference on Solid State Devices and Materials2013, SSDM2013 2013)
  • Dynamics Analysis of Rapid-Melting Growth Using SiGe on Insulator
    (The 8th International Conference on Silicon Epitaxy and Heterostructures, ICSI-8 2013)
  • Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth
    (SSDM2012, International Conference on Solid State Devices and Materials2012 2012)
  • Formation of N-Type Ge-on-Insulator through P-Implantation and Rapid-Melting Growth
    (IUMRS-ICEM2012 International Conference on Electronic Materials 2012 2012)

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