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Co-authoring Researcher

  • GOTOW Takahiro
    National Institute of Advanced Industrial Science and Technology
    TCADシミュレーション, MOS界面評価, 半導体デバイス
  • Sadoh Taizoh
    Kyushu University Faculty of Information Science and Electrical Engineering
    半導体工学, 固体物性I, 応用物性・結晶工学, Solid-State Physics I, Applied Physics of Property and Crystallography

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J-GLOBAL ID：201301074692078670 Update date: Nov. 24, 2024

Matsumura Ryo

マツムラ リョウ | Matsumura Ryo
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Papers (65)

  • Rahmat Hadi Saputro, Tatsuro Maeda, Kaoru Toko, Ryo MATSUMURA, Naoki Fukata. High Doping Activation (≥1020 cm-3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing. ACS Applied Electronic Materials. 2024
  • Qinqiang Zhang, Ryo Matsumura, Kazuhito Tsukagoshi, Naoki Fukata. Synthesis of submillimeter-scale laterally-grown germanium monosulfide thin films and their electro-optic applications. Journal of Materials Chemistry C. 2024. 12. 44. 18101-18110
  • Rahmat Hadi Saputro, Tatsuro Maeda, Ryo Matsumura, Naoki Fukata. Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications. Materials Science in Semiconductor Processing. 2023
  • Qinqiang ZHANG, Ryo MATSUMURA, Naoki Fukata. Synthesis of Large-Area GeS Thin Films with the Assistance of Pre-deposited Amorphous Nanostructured GeS Films: Implications for Electronic and Optoelectronic Applications. ACS Applied Nano Materials. 2023
  • Ryo Matsumura, Naoki Fukata. Direct Detection of Free H2Outgassing in Blisters Formed in Al2O3Atomic Layers Deposited on Si and Methods of Its Prevention. ACS Applied Materials and Interfaces. 2022. 14. 1. 1472-1477
  • Ryo Matsumura, Naoki Fukata. Formation of Free Hydrogen Gas By Annealing ALD-Al2O3/Si Stacked Structure. ECS Transactions. 2022. 108. 5. 57-61
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing. ECS Transactions. 2022. 108. 5. 79-82
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films. Crystal Growth and Design. 2021. 21. 11. 6523-6528
  • Ryo Matsumura, Satoshi Ishii, Naoki Fukata. Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing. Materials Science in Semiconductor Processing. 2021. 134. 106024-106024
  • Ryo Matsumura, Naoki Fukata. Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing. ECS Transactions. 2021. 102. 2. 141-146
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications. ECS Transactions. 2021. 102. 2. 147-150
  • ラハマト ハディ サプトロ, 松村 亮, 深田. Sb 添加Ge 縦型pn ダイオードの電気特性に及ぼす基板加熱堆積の効果. 電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-プロシーディング集. 2021. 133-136
  • 松村亮, 深田直樹. 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成⻑. 電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-プロシーディング集. 2021. 63-66
  • Matsumura, R., Fukata, N. Self-organized 〈1 0 0〉 direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing. Materials Letters. 2021. 288
  • Nakajima, Y., Murata, H., Kado, Y., Matsumura, R., Fukata, N., Suemasu, T., Toko, K. Fe-induced layer exchange of multilayer graphene for rechargeable battery anodes. Applied Physics Express. 2020. 13. 2. 025501-025501
  • Matsumura, R., Fukata, N. Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin. ECS Journal of Solid State Science and Technology. 2020. 9. 6
  • Sadoh, T., Sakai, T., Matsumura, R. Low-temperature (∼250°C) gold-induced lateral growth of Sn-doped Ge on insulator enhanced by layer-exchange reaction. ECS Journal of Solid State Science and Technology. 2019. 8. 10. P609-P614
  • Sun, Y.-L., Matsumura, R., Jevasuwan, W., Fukata, N. Au-Sn Catalyzed Growth of Ge1- xSnx Nanowires: Growth Direction, Crystallinity, and Sn Incorporation. Nano Letters. 2019. 19. 9. 6270-6277
  • Matsumura, R., Wang, Y., Jevasuwan, W., Fukata, N. Single grain growth of Si thin film on insulating substrate by limited region aluminum induced crystallization. Materials Letters. 2019. 252. 100-102
  • Shinichi Takagi, Array, Wu-Kang Kim, Kwangwon Jo, Ryo Matsumura, Ryotaro Takaguchi, Dae-Hwan Ahn,Array, Mitsuru Takenaka. MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI. 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. 2018. 2018-September. 6-11

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