Art

J-GLOBAL ID：201302200505444454   Reference number：13A1820897

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

DCおよびACストレスのもとでの,HfSiONゲート誘電体を有するn-MOSFETにおける時間依存絶縁破壊(TDDB)分布

Author (10)： HIRANO Izumi (Corporate Res. & Dev. Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  HIRANO Izumi (Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, JPN) ,  NAKASAKI Yasushi (Corporate Res. & Dev. Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  FUKATSU Shigeto (Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  GOTO Masakazu (Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  NAGATOMO Koji (Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  INUMIYA Seiji (Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  SEKINE Katsuyuki (Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  MITANI Yuichiro (Corporate Res. & Dev. Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN) ,  YAMABE Kikuo (Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, JPN)
Material： Microelectronics Reliability  (Microelectronics and Reliability)
Volume： 53  Issue： 12  Page： 1868-1874  Publication year： Dec. 2013 
JST Material Number： C0530A  ISSN： 0026-2714  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *hafnium compound ,  *insulating film ,  *interlayer dielectric ,  silicon compound ,  *oxide ,  nitride ,  N-type semiconductor ,  *MOSFET ,  *time dependence ,  *dielectric breakdown ,  *gate(semiconductor) ,  Weibull distribution ,  *leakage current ,  laminate structure ,  CMOS structure ,  *reliability(property) ,  capacitance-voltage characteristic
Semi thesaurus term： nMOSFET ,  Time-Dependent Dielectric Breakdown ,  stress-induced leakage current ,  SILC

JST classification (2)： Measurement,testing and reliability of solid-state devices  (NC03040G) ,  Transistors  (NC03070N)

Terms in the title (9)： DC ,  Ac ,  ストレス ,  HfSiON ,  ゲート誘電体 ,  MOSFET ,  絶縁破壊 ,  TDDB ,  分布