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About SAWAKI NOBUHIKO
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About 名古屋大 大学院工学研究科
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About 名古屋大 大学院工学研究科
Material：
About 愛知工業大学総合技術研究所研究報告
Issue： 15 Page： 27-30 Publication year： Sep. 30, 2013
JST Material Number： L3722A ISSN： 1344-9672 Document type： Article
Article type： 原著論文 Country of issue： Japan (JPN) Language： JAPANESE (JA)
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About gallium nitride
About compound semiconductor
About semiconductor thin film
About substrate (plate)
About silicon
About optoelectronics
About tilt angle
About facet
About hexagonal system
About stacking fault
About selective growth
About structure
About polarity
About scanning electron microscope
About threading dislocation
About dislocation density
About defect
About silicon photonics
About semipolar
About lattice defect
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
About defect structure
About 単層欠陥
Category name(code) classified by JST.
About Semiconductor thin films
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About Si基板
About 成長
About 半極性
About GaN
About 欠陥構造
About 評価
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