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J-GLOBAL ID:201302234640574262   Reference number:13A0032801

1ミクロン帯発光広帯域光源を目指したIn-flush法によるInAs量子ドットの作製と光学評価

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Volume: 23rd  Page: 337-340  Publication year: 2012 
JST Material Number: L3956A  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Luminescence of semiconductors 
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