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Art
J-GLOBAL ID:201302241018049378   Reference number:13A1937022

High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces

p-GaN表面の誘導結合プラズマエッチング損傷についての高温等温容量過渡分光法による研究
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Material:
Volume: 52  Issue: 11,Issue 2  Page: 11NH03.1-11NH03.4  Publication year: Nov. 25, 2013
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semi thesaurus term:
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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Electronic structure of impurites and defects  ,  Irradiational changes semiconductors 

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