Art

J-GLOBAL ID：201302257748329736   Reference number：13A1418843

Selective Area Growth of Semipolar (20<span style=text-decoration:overline>2</span>1) and (20<span style=text-decoration:overline>2</span><span style=text-decoration:overline>1</span>) GaN Substrates by Metalorganic Vapor Phase Epitaxy

有機金属気相エピタキシーによる半極性(20<span style=text-decoration:overline>2</span>1)及び(20<span style=text-decoration:overline>2</span><span style=text-decoration:overline>1</span>)GaN基板の選択領域成長

Author (6)： JINNO Daiki (Mie Univ., Tsu, JPN) ,  MA Bei (Mie Univ., Tsu, JPN) ,  MIYAKE Hideto (Mie Univ., Tsu, JPN) ,  HIRAMATSU Kazumasa (Mie Univ., Tsu, JPN) ,  ENATSU Yuuki (Mitsubishi Chemical Corp., Ibaraki, JPN) ,  NAGAO Satoru (Mitsubishi Chemical Group Sci. and Technol. Res. Center, Inc., Yokohama, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 52  Issue： 8,Issue 2  Page： 08JC06.1-08JC06.4  Publication year： Aug. 25, 2013 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *MOCVD ,  *gallium nitride ,  substrate (plate) ,  compound semiconductor ,  semiconductor thin film ,  *surface structure ,  scanning electron microscope ,  electron microscopy ,  III-VI semiconductor ,  wide band gap semiconductor ,  Scanning Electron Microscopy ,  *structure
Semi thesaurus term： III-VI semiconductor ,  wide band-gap semiconductor ,  scanning electron microscopy

JST classification (2)： Surface structure of semiconductors  (BK15030A) ,  Semiconductor thin films  (BK14040E)

Reference (25)：

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Terms in the title (4)： 有機金属気相エピタキシー ,  半極性 ,  GaN ,  領域成長