Art

J-GLOBAL ID：201302290080282276   Reference number：13A1323545

Improvement of charge trapping characteristics of Al₂O₃/Al-rich Al₂O₃/SiO₂ stacked films by thermal annealing

Al₂O₃/AlリッチなAl₂O₃/SiO₂積層膜の電荷捕獲特性の熱的アニールによる改善

Author (5)： NAKATA Shunji (NTT Microsystem Integration Laboratories, Atsugi 243-0198, JPN) ,  KATO Takashi (Graduate School of Natural Sci. and Technol., Kanazawa Univ., Kanazawa 920-1192, JPN) ,  OZAKI Shinya (Graduate School of Natural Sci. and Technol., Kanazawa Univ., Kanazawa 920-1192, JPN) ,  KAWAE Takeshi (Graduate School of Natural Sci. and Technol., Kanazawa Univ., Kanazawa 920-1192, JPN) ,  MORIMOTO Akiharu (Graduate School of Natural Sci. and Technol., Kanazawa Univ., Kanazawa 920-1192, JPN)
Material： Thin Solid Films
Volume： 542  Page： 242-245  Publication year： Sep. 02, 2013 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *alumina ,  silicon dioxide ,  magnetron sputtering ,  *sputtered deposition ,  *capacitance-voltage characteristic ,  multilayer film ,  thin film ,  *annealing (heat treatment) ,  carrier density ,  wafer ,  silicon ,  substrate (plate) ,  carrier capture ,  electric charge ,  nonvolatile memory ,  oxide thin film ,  Si wafer ,  charge trapping
Semi thesaurus term： silicon substrate ,  charge trapping

JST classification (3)： Electronic recording,magnetic recording,optical recording  (NC06020F) ,  Oxide thin films  (BK14050P) ,  Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B)

Terms in the title (6)： Al2O3 ,  Al ,  SiO2 ,  積層膜 ,  電荷捕獲 ,  アニール