Art
J-GLOBAL ID:201402226734381446   Reference number:14A0891259

Oxidation-ambience-dependent near-interface structure of thermally grown oxide on 4H-SiC

4H-SiCにおける熱酸化界面構造の酸化雰囲気による相違
Author (3):
Material:
Volume: 114  Issue: 88(SDM2014 43-61)  Page: 97-100  Publication year: Jun. 12, 2014 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (1):
JST classification
Category name(code) classified by JST.
Materials of solid-state devices 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page