Art

J-GLOBAL ID：201402275882135196   Reference number：14A0892183

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

合成電界効果によるトンネル電界効果トランジスタの性能向上

Author (12)： MORITA Yukinori (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  MORI Takahiro (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  MIGITA Shinji (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  MIZUBAYASHI Wataru (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  TANABE Akihito (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  FUKUDA Koichi (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  MATSUKAWA Takashi (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  ENDO Kazuhiko (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  O'UCHI Shinichi (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  LIU Yong Xun (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  MASAHARA Meishoku (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN) ,  OTA Hiroyuki (National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
Material： IEEE Electron Device Letters  (IEEE Electron Device Lett)
Volume： 35  Issue： 7  Page： 792-794  Publication year： Jul. 2014 
JST Material Number： B0344B  ISSN： 0741-3106  CODEN： EDLEDZ  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  *electric field effect ,  tunnel effect ,  layer ,  epitaxy ,  MOSFET ,  consumed electric power ,  electric current ,  *drain (semiconductor) ,  epitaxial layer
Semi thesaurus term： subthreshold swing ,  *drain current ,  *tunnel field effect transistor ,  electric field effect

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： 電界効果 ,  トンネル電界効果トランジスタ ,  性能向上