Research theme for competitive and other funds (14)：
2021 - 2024 Interface charge engineering for manipulation of band alignment at dielectric interfaces and demonstration of its impact on device characteristics
2018 - 2021 Clarification of the guideline to improve SiC MOSFET performance based on the structural deformation analysis near the thermally-oxidized interface
2016 - 2018 Quasi-quantitative characterization of defect density in SiC substrate after thermal oxidation by photo-assited capacitance measurement
2015 - 2018 Development of Materials Informatics to Predict Polarization at Oxide Hetero-Interfaces
2015 - 2018 Study on Limiting Factors of Electron Mobility in SiC MOS Inversion Channel with Improved Quality Interface
2014 - 2016 Study on voltage-induced change of interface magnetic anisotropy at ferromagnetic-oxide interface toward ultralow power consuming non-volatile memories
2012 - 2015 Study on voltage control of interface anisotropy energy at ferromagnetic - oxide interfaces
2010 - 2012 Application of proton conduction of nickel oxide nanostructures to electrochromic devices
2007 - 2011 Understanding and Control of Electronic Properties of Nanometer-thick Dielectric Films
2007 - 2009 Study on Ge surface oxidation processes based on in-situ analysis
2004 - 2005 高誘電率絶縁膜-シリコン界面における界面反応層の形成・消失過程の解明
2001 - 2005 Study of Interface Control in Ultra-thin High-k Film on Silicon Substrate
2001 - 2002 ナノ・プラスティックFETの研究開発
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Papers (183)：
Runze Wang, Munetaka Noguchi, Shiro Hino, Koji Kita. Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2. Applied Physics Express. 2024. 17. 8
Tianlin Yang, Takashi Onaya, Koji Kita. Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process. IEEE Electron Device Letters. 2024. 45. 7. 1145-1148
Runze Wang, Munetaka Noguchi, Hiroshi Watanabe, Koji Kita. Dependence of the incorporated boron concentration near SiO2/4H-SiC interface on trap passivation reduction. AIP Advances. 2024. 14. 7
Tatsuya Inoue, Takashi Onaya, Koji Kita. Enhancement of remnant polarization in ferroelectric HfO2 thin films induced by mechanical uniaxial tensile strain after the crystallization process. Applied Physics Express. 2024. 17. 5
Qiao Chu, Masahiro Masunaga, Akio Shima, Koji Kita. Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001). Japanese Journal of Applied Physics. 2024. 63. 3
Hirohisa Hirai, Koji Kita. Effects of high-temperature diluted-H-2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2 (Retraction of Vol 55, 10.7567/JJAP.55.04ER16, 2016). JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 7
Seiichiro Higashi, Koji Kita, Seiji Akita. FOREWORD Solid State Devices and Materials. JAPANESE JOURNAL OF APPLIED PHYSICS. 2015. 54. 4
