Art

J-GLOBAL ID：201502202037583776   Reference number：15A0984242

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

ヒ素とホウ素を大量にドープしたSi表面に対するエピタキシャルチャネル品質の改善とトンネル電界効果トランジスタの性能への影響

Author (11)： MORITA Yukinori (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORI Takahiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIGITA Shinji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIZUBAYASHI Wataru (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  FUKUDA Koichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ENDO Kazuhiko (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  O'UCHI Shin-ichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  LIU Yongxun (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MASAHARA Meishoku (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Solid-State Electronics  (Solid-State Electron)
Volume： 113  Page： 173-178  Publication year： Nov. 2015 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  *epitaxy ,  *quality ,  arsenic ,  boron
Semi thesaurus term： *epitaxy ,  *channel quality ,  *tunnel field effect transistor

JST classification (1)： Transistors  (NC03070N)

Terms in the title (7)： ヒ素 ,  ホウ素 ,  ドープ ,  Si ,  エピタキシャル ,  チャネル品質 ,  トンネル電界効果トランジスタ