Art
J-GLOBAL ID:201502253944070260   Reference number:15A0491599

Effect of Background Pressure on Deposition Rate and Crystallinity of Deposited Silicon in Non-Equilibrium Plasma Jet CVD

非平衡プラズマジェットCVD法によるシリコン製膜時に装置内圧力が製膜速度,膜質におよぼす影響
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Material:
Volume: 41  Issue:Page: 148-152 (J-STAGE)  Publication year: 2015 
JST Material Number: S0110B  ISSN: 0386-216X  CODEN: KKRBAW  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Category name(code) classified by JST.
Manufacturing technology of solid-state devices  ,  Applications of plasma 
Reference (17):
  • Abhinandan, L. and A. Holländer; “Localized Deposition of Hydrocarbon using Plasma Activated Chemical Vapour Deposition,” Thin Solid Films, 457, 241–246 (2004)
  • Bhandarkar, U. V., M. T. Swihart, S. L. Girshick and U. R. Kortshagen; “Modelling of Silicon Hydride Clustering in a Low-pressure Silane Plasma,” J. Phys. D, 33, 2731–2746 (2000)
  • Bird, B., W. Stewart and E. Lightfoot; Transport Phenomena, 2nd ed., pp. 11–39, John Wiley & Sons, U.S.A. (2007)
  • Chae, Y. K., H. Ohno, K. Eguchi and T. Yoshida; “Ultrafast Deposition of Microcrystalline Si by Thermal Plasma Chemical Vapor Deposition,” J. Appl. Phys., 89, 8311–8315 (2001)
  • Gardon, R. and J. Cobonpue; “Heat Transfer between a Flat Plate and Jets of Air Impinging on It,” Int. Develop. Heat Transf. ASME, 454–460 (1962)
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