Art
J-GLOBAL ID:201502257366310010   Reference number:15A0671450

Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching

Arプラズマエッチングを利用した素子分離プロセスによるhigh-k/金属ゲートMoS2電界効果トランジスタの作製
Author (8):
Material:
Volume: 54  Issue:Page: 046502.1-046502.4  Publication year: Apr. 2015 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

JST classification (1):
JST classification
Category name(code) classified by JST.
Transistors 

Return to Previous Page