Art

J-GLOBAL ID：201602250137560307   Reference number：16A0911520

Changes of chemical structure of hydrogenated amorphous silicon carbide films with the application of radio-frequency bias voltages during chemical vapor deposition

化学気相堆積中の高周波バイアス電圧印加に伴う水素化非晶質炭化シリコンの化学構造の変化

Author (7)： Ito Haruhiko (Department of Chemistry, Nagaoka University of Technology, Nagaoka 940-2188, Japan) ,  Ogaki Takeshi (Department of Chemistry, Nagaoka University of Technology, Nagaoka 940-2188, Japan) ,  Kumakura Motoki (Department of Chemistry, Nagaoka University of Technology, Nagaoka 940-2188, Japan) ,  Saeki Shunsuke (Department of Chemistry, Nagaoka University of Technology, Nagaoka 940-2188, Japan) ,  Suzuki Tsuneo (Extreme Energy-Density Research Institute of Nagaoka University of Technology, Nagaoka 940-2188, Japan) ,  Akasaka Hiroki (Department of Chemistry, Nagaoka University of Technology, Nagaoka 940-2188, Japan) ,  Saitoh Hidetoshi (Department of Chemistry, Nagaoka University of Technology, Nagaoka 940-2188, Japan)
Material： Diamond and Related Materials  (Diam Relat Mater)
Volume： 66  Page： 1-9  Publication year： Jun. 2016 
JST Material Number： W0498A  ISSN： 0925-9635  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,  *hydrogenation ,  *amorphous state ,  *chemical vapor deposition ,  voltage ,  *bias ,  HF ,  microwave discharge ,  organosilicon compound ,  substrate(plate) ,  silicon ,  *molecular structure ,  *hardness ,  chemical bond
Semi thesaurus term： silicon carbide ,  chemical vapor deposition ,  bias voltage ,  high frequency ,  chemical structure ,  C-Si bond

Author keywords (5)： Hydrogenated amorphous silicon carbide films ,  Microwave plasma CVD ,  Radio-frequency bias ,  Mechanical hardness ,  Chemical structure

JST classification (2)： Thin films of other inorganic compounds  (BK14060A) ,  Mechanical properties of solids in general  (BL01021C)

Substance index (1)： Tetramethylsilane

Terms in the title (7)： 化学気相堆積 ,  高周波バイアス ,  電圧印加 ,  水素化 ,  非晶質 ,  炭化シリコン ,  化学構造