Art

J-GLOBAL ID：201602269816129265   Reference number：16A0919257

Analysis of X-ray diffraction curves of trapezoidal Si nanowires with a strain distribution

歪分布を有する台形SiナノワイヤのX線回折曲線の分析

Author (4)： Takeuchi Teruaki (Research organization for Nano & Life innovation, Waseda University, 120-5, 513 Wasedatsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan) ,  Tatsumura Kosuke (Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan) ,  Shimura Takayoshi (Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871, Japan) ,  Ohdomari Iwao (Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan)
Material： Thin Solid Films
Volume： 612  Page： 116-121  Publication year： Aug. 01, 2016 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *strain distribution ,  *trapezoid ,  silicon ,  *nanowire ,  *X-ray diffraction ,  *rocking curve ,  theory ,  morphology(form) ,  calculation ,  interference fringe ,  strength ,  position
Semi thesaurus term： Si ,  *silicon nanowire ,  *rocking curve ,  kinetic theory ,  cross-sectional shape ,  diffraction intensity

Author keywords (5)： X-ray diffraction ,  Silicon ,  Nanowires ,  Strain distribution ,  Trapezoidal cross-section

JST classification (2)： Semiconductor thin films  (BK14040E) ,  X-ray diffraction methods  (BK01020I)

Terms in the title (6)： 歪分布 ,  台形 ,  Si ,  ナノワイヤ ,  X線 ,  分析