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J-GLOBAL ID：201602274319697621   Reference number：16A0992941

Modify the Schottky contact between fluorine-doped tin oxide front electrode and p-a-SiC:H by carbon dioxide plasma treatment

炭酸ガスプラズマ処理でのフッ素ドーピング酸化スズ前部電極とp-a-SiC:Hの間のショットキー接合の変更

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Author (40)： Li Tiantian (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Li Tiantian (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Li Tiantian (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Li Tiantian (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Xiaodan (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Xiaodan (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Zhang Xiaodan (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Zhang Xiaodan (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Ni Jian (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Ni Jian (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Ni Jian (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Ni Jian (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Fang Jia (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Fang Jia (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Fang Jia (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Fang Jia (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Dekun (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhang Dekun (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Zhang Dekun (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Zhang Dekun (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Sun Jian (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Sun Jian (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Sun Jian (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Sun Jian (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Wei Changchun (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Wei Changchun (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Wei Changchun (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Wei Changchun (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Xu Shengzhi (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Xu Shengzhi (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Xu Shengzhi (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Xu Shengzhi (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Wang Guangcai (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Wang Guangcai (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Wang Guangcai (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Wang Guangcai (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhao Ying (Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China) ,  Zhao Ying (Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, People’s Republic of China) ,  Zhao Ying (Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, People’s Republic of China) ,  Zhao Ying (Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University, Tianjin 300071, People’s Republic of China)
Material： Solar Energy  (Sol Energy)
Volume： 134  Page： 375-382  Publication year： Sep. 2016 
JST Material Number： E0099A  ISSN： 0038-092X  CODEN： SRENA  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *plasma treatment ,  *metal-semiconductor junction ,  *solar cell ,  amorphous silicon ,  doping ,  current density ,  efficiency ,  tin oxide ,  *Schottky Junction ,  conversion efficiency ,  amorphous silicon solar battery
Semi thesaurus term： amorphous silicon solar cell

Author keywords (4)： Carbon dioxide plasma ,  SnO₂:F front electrode ,  Interface ,  Amorphous silicon solar cell

JST classification (1)： Solar cell  (NC03084O)

Terms in the title (6)： 炭酸ガス ,  プラズマ処理 ,  フッ素ドーピング ,  酸化スズ ,  SiC ,  ショットキー接合